Applied Materials社の請求項 #536

6620723
Applied Materials
A method of forming a barrier layer structure for use in integrated circuit fabrication, comprising: positioning a substrate having an oxide layer thereon, wherein the oxide layer has apertures formed therein to a top surface of the substrate; forming a first boride layer comprising two or more refractory metals on at least a portion of the oxide layer and the substrate surface by chemisorbing monolayers of a boron containing compound and one or more refractory metal compounds on the substrate; and forming a second boride layer comprising one or more refractory metals on the first boride layer by chemisorbing monolayers of a boron containing compound and one or more refractory metal compounds on the substrate.