process flow for

Structure and process flow for fabrication of dual gate floating body integrated MOS transistors
US Pat. 6392271

The present invention relates to fabrication techniques for integrated circuit structures and, in particular, to a self-aligned process flow for thermally driving phosphorous from a phosphorous oxychloride (POCl.sub.3) layer into underlying polysilicon to establish a desired conductivity level in the polysilicon.
US Pat. 5843834

FIG. 3 illustrates a sequence of steps in a first NAND process flow for making a NAND type flash memory device according to the invention.
US Pat. 6362049

This second user 24 may then create and maintain the process flow for this job by specifying the process entities 500 that this job requires.
US Pat. 5321605