be formed on a surface of

図１に示した構造はまた、分離領域の上も含めて基板の表面上に形成されたＳｉＧｅ含有ベース領域２２も含む。

The structure shown in FIG 1 also includes SiGe-containing base region 22 which is formed on a surface of the substrate including on top of the isolation regions.

特許公表２００４－５２７９２２
WO02097896より引用