The following are examples of the prior art.
US Pat. 5765153
(The following are trademarks of International Business Machines Corporation: IBM, AS/400, OS/400, PS/2, OS/2, RISC System/6000, AIX).
US Pat. 6092096
The following are examples of well-known database models: the hierarchical model, the network model, and the relational model.
US Pat. 5890160
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The novel features believed characteristic of the invention are set forth in the appended claims.
US Pat. 6034681
These and other improvements are set forth in the following detailed description.
US Pat. 5590348
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FIG. 2 is a flow chart of a specific example is in which the commands are embedded in comments in an HTML page served through a gateway server to a web browser.
US Pat. 6343328
One specific example of an EBCDIC based host is the AS/400 offered by International Business Machines Corporation.
US Pat. 5784544
As a specific example, each controller and its respective storage may be provided by an IBM model 3590 RAMAC III disk storage subsystem.
US Pat. 6260124
As a specific example, the invention may be implemented to provide a method of generating a data structure while concurrently analyzing the data structure.
US Pat. 5873091
In one specific example, the server 103 could use an IBM P690 power 4 processor, running the AIX operating system and Tivoli Storage Manager (TSM), all of which are available from IBM Corporation.
US Pat. 7240171
One specific example of such a situation is an accounting program designed such that payroll data applications can only be run from a one specific physical terminal (in a locked room) identified by its specific physical identification parameters.
US Pat. 6011915
In the following description of the invention, reference is made to the accompanying drawings, which form a part thereof, and in which is shown by way of illustration a specific example whereby the invention may be practiced.
US Pat. 6732116
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A reference voltage is produced which tracks a power supply voltage, remaining a threshold voltage away therefrom at all times.
US Pat. 4460985
A Hall output voltage is produced by the sensor in response to a magnetic flux field passing therethrough and, due to the high carrier velocities achieved, a very high sensitivity device is obtained by operating the FET structure in the pinch off mode or depletion mode.
US Pat. 4048648
his improvement is accomplished by modulating the voltage drive to transducer 24 so that a selected drive voltage is produced at each of the possible drop production times T.
US Pat. 4266232
A third transistor, acting as a current sink, has its base electrode connected to the base electrode of the second transistor at which a reference voltage used as a control voltage is produced.
US Pat. 3982171
With the voltage at the equal output EQ of the register 20 low, a high voltage is produced at the output of the inverter 46 in the counter 38 which is applied to a further input of the AND circuit 68 and to the data input of the latch 70 through the AND circuit 64.
US Pat. 5859804
his voltage is produced by the static difference between the R1 and R2 values on the one hand, and the I1 and I2 values on the other hand, whereas it is desirable that these values be equal.
US Pat. 4395681
In one embodiment of the second method, a small offset voltage is produced at the gate electrode of the second FET.
US Pat. 4097753
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A voltage waveform generator capable of producing one of four different voltages is utilized to input and output charge in the multiple level charge method.
US Pat. 4139910
Multiple passes are made through the primitive data structure for each light source capable of producing shadows in the scene to be rendered.
US Pat. 5377313
Recording arrangement in which a row of ink jet nozzles is inclined with respect to the relative motion of a recording surface to permit the variously and selectively charged drops from each nozzle to be deflected by a single pair of planar electrostatic deflection plates common to all nozzles and parallel to the row so that each nozzle is capable of producing marks at regularly spaced locations along a plurality of parallel rows.
US Pat. 4091390
A system for performing the method includes a transport device adapted to transport the article through a predetermined path and an acoustic sensor in structure-borne acoustic contact with the transport device and capable of producing an acoustic signal indicative of physical interference.
US Pat. 6282459
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Since each viewable period is provided with a readable security classification label automatically, regardless of whether the calendar presentation is on the display screen or in hard copy, all of the requirements of the established information security system are met and the electronic calendaring application need not be treated as an exception to the information security system.
US Pat. 4881179
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Still referring to FIG. 1B, there are provided on the master document 1 a number of lines which fall within the areas I-IX.
US Pat. 4272187
As is shown in FIG. 2, there are provided a number of lines, illustratively shown as dashed lines, on the master document 1.
US Pat. 4272187
Between INT 55 and TDE 56, there are provided a 2-bit wide path 66 for serialized data, and a 9-bit wide path 67 for sync character information.
US Pat. 4335426
In each stage, there are provided n AND gates 67, one for each adapter.
US Pat. 5392033
The photoresist layer 20 on layer 18' is exposed in a pattern as shown in FIG. 4 wherein there are provided an array of rectangular openings 24 which may suitably have dimensions of about 4-25 mils by 4-25 mils.
US Pat. 3971860
There are provided in this packet the fields 75 and 73 which are part of the request packet and would preferably be encrypted, thereby requiring decryption by the client 20 utilizing the shared second key 71 to authenticate the SECIPL server 28.
US Pat. 5349643
(there are provided + in this packet + the fields 75 and 73)
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As indicated at time 1, a condition occurs to cause an interrupt in the device.
US Pat. 5907712
However, if a signal is provided to one of the interrupt inputs I1, I2, I3, or I4, the execution of the program then being done will cease and a jump will occur to cause execution of a special program associated with the particular interrupt input.
US Pat. 4284362
In fact, the more frequent an L1 entry is accessed, the less frequently is the corresponding L2 entry likely to be accessed, since no L1 miss is likely to occur to cause an access to the L2 entry.
US Pat. 4464712
After block 100, processing then flows back to FIG. 5 where one of various object events may occur to cause further processing.
US Pat. 5600776
The arrows shown from each bit position of register D to the bit positions of plane 0 illustrate the movement which must occur to cause the bits in register D to be properly reordered so that they can be stored in plane 0.
US Pat. 4956810
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Finally, in terms of function, the magnetics block 136 is intended to indicate the function of providing the appropriate impedance matching and interfacing between the transceiver 134 and the network medium 126, whether it be Ethernet, FDDI, etc.
US Pat. 5742833
Arrows 46 and 52 are intended to indicate this functional interaction between the software interfaces corresponding to the applications and the display adapter 12, or, more particularly, memory planes 40.
US Pat. 5748866
JAVA includes a wealth of frameworks, class libraries and a new programming environment intended to greatly enhance application software development, on the internet.
US Pat. 6694506
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When the sensor is moved in a direction orthogonal to a measurement direction, only weak modulation occurs due to fringing effects.
US Pat. 5434504
Still referring to FIGS. 4 and 5 in conjunction with FIG. 7, bimorph motor 206 vacillate (i.e., oscillate) transducer 208 in a direction orthogonal to normal head motion along head path 35 and as a result the head is constrained to follow a selected data track.
US Pat. 4285017
The isolation mediums may be in the form of a recessed oxide in the semiconductor substrate or as conductive lines forming a field shield in a direction orthogonal to the field shield provided by the adjacent lines.
US Pat. 4021789
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Handle 43 is sufficiently wide to freely accept rib 42.
US Pat. 4245916
Therefore, instruction busses must be sufficiently wide to permit entire branch groups to be fetched.
US Pat. 5434985
At least one of the rollers has a sufficiently wide diameter to curve the belt at a point between the flash illumination system and the development station.
US Pat. 4396274
The gap 30 is sufficiently wide to allow a little play of the element 26 within the hole 20 so that the element 26 can attain relatively flat surface engagement with the chip 10.
US Pat. 4167771
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The bores are laterally spaced apart in the base block and have diameters that are sufficiently wide so as to prevent deflected fastening assemblies engaging the graphite base block when the assemblies are loaded.
The method of claim 3 wherein central parts having a sufficiently narrow width are entirely removed to form nominally unexposed regions in place of the removed central parts.
The method of claim 6 wherein central parts not entirely removed but also not sufficiently wide to have the edges thereof set back by about twice the edge bias amount are set back such that a remaining central part is formed of predetermined minimum width.
US Pat. 4520269
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Utilizing the three modes to manage the use of the client cache optimizes overall system performance by combining both an overall average increase in read/write response speed with file integrity.
US Pat. 5175852
The problem of cursor invisibility results from a relatively slow response speed of the liquid crystal material.
US Pat. 5214414
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Such devices generally have good response speed, but minimal quantum efficiency. Thickening the depletion region increases quantum efficiency but at the expense of response speed.
Non-photo-type lateral transistors are known in the art, but they generally have higher base resistance, and hence, slower response speed than vertical transistors.
What is needed is a photo detector that provides broad spectral bandwidth sensitivity and improved output signal intensity without sacrificing response speed.
It is a further object of the present invention to provide a photo detector having good response speed for high frequency applications.
In accordance with the foregoing objectives, an integrated circuit-compatible photo detector is provided that is constructed using lateral semiconductor structures having superior spectral bandwidth sensitivity and output signal intensity, and also having suprisingly robust response speed.
US Pat. 5994162
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More recently, several significant advantages over static logic circuits have been realized by the development of logic circuit designs which are highly asymmetrical in response to both input voltage levels and response speed. The basic theory of the response speed improvement in such devices is that propagation time of a logic element will be minimized if the circuit can be brought to a logic state from which it may rapidly be switched to another logic state before data is applied to it.
This results in excessive power consumption which may, in turn, affect response speed or pull voltage levels away from the intended logic states.
It should also be understood that, at the present state of the art, substantial design effort may be expended to obtain a seemingly small percentage increase in response speed.
This form of gate circuit also utilizes precharged logic for high response speed and is self-resetting.
It is also seen that the invention provides a memory using precharged circuits having asymmetrical response speed and noise immunity and capable of directly driving both precharged and static types of logic.
US Pat. 5481500
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However, a significant disadvantage of this system is that, due to its small size, the auxiliary memory is permanently dedicated to the storage of the low resolution foreground color information.
US Pat. 4757309
Another significant disadvantage of conventional single optical fiber ring communications systems is that the entire loop goes down when one fiber becomes inoperative.
US Pat. 5535035
The significant disadvantage in its network scalablity is primarily caused by the (N-1) number of ports required in each node of the network, since the number of ports must be changed in every previously existing node in the network when the number N of nodes is increased in the network.
US Pat. 6721335
This functional rigidity limits the application of a particular graphics display system and is a significant disadvantage, particularly in the general purpose display system field.
US Pat. 4951229
But this approach has the significant disadvantage that each instantiation of such a process model is executed by the WFMS with identical execution priority characteristics.
US Pat. 6976257
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Solutions such as hypercube configurations have been conventionally used to limit the largest distance between processors.
US Pat. 5166674
Such systems have been conventionally used, for example, to identify automobiles on toll roads and effect a toll payment transaction.
US Pat. 6587755
The use of Cu and Cu alloys in such applications can result in several advantages over the use of aluminum and its related alloys, which have been conventionally used as chip interconnection materials.
US Pat. 6992390
Such systems have been conventionally used, for example, to identify automobiles on toll roads and effect a toll payment transaction.
US Pat. 7209807
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The data server manages a large number of large sized video data files containing video programming data which is to be broadcast to requesting subscribers over the communications network.US Pat. 5508732
Typically, such available space is limited when large-sized integrated circuit chips are mounted to the substrate.
US Pat. 5831810
Raster image processing can be of considerable duration, particularly for the printing of large-sized graphical images containing large numbers of pixels.
US Pat. 6651116
For example, this multiplication factor could be based on window size, where small windows have greater heating and cooling rates/factors (i.e. multiplication factor>1) than normal sized windows (i.e. multiplication factor=1), and large sized windows (i.e. multiplication factor<1) have slower heating and cooling rates/factors. US Pat. 5532715
Thus, as the logic technology migrates to silicon-on-insulator (SOI) substrate technology, it becomes difficult to fabricate a DRAM that requires deep trench capacitor structures, or having a large-sized capacitor.
US Pat. 6214653
As the compounder is located further from the CPU, more instructions can be examined in a large sized instruction stream window to determine the best grouping for compounding for increasing execution performance.
US Pat. 5448746
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To achieve high performance and the advantages alluded to above in the present package, a peripheral arrangement of power distribution is not acceptable.
US Pat. 4811082
lternatively, where no physical device is involved as the source or destination of the data stream, the stream handler may be implemented at a lower privilege level and still achieve optimal performance.
US Pat. 5487167
In accordance with a first embodiment of this invention, this partitioning of data enables the LSFS disk manager 16 to manage the active data to achieve optimum performance.
US Pat. 5537588
It should be understood that the various features of the invention can be used singly or in any combination to achieve improved performance over ion deposition systems known in the art but are preferably used together to achieve highest efficiency of ion deposition as well as of the operation of the deposition apparatus, itself.
US Pat. 5206516
This meant that one would achieve the best cost/performance from the largest computer that could be justified when its resources were shared among many unrelated users.
An emulation program can achieve higher performance if it has primitives available as well as the basic instructions.
US Pat. 4514803
Power dissipation may be reduced by lower operating voltages, which requires that geometries be scaled down to achieve desired performance.
US Pat. 5675164
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For example, it is more cost effective to print a small volume of documents (e.g., books, catalogs, magazines, etc.) with a digital printing system rather than an offset printing press, particularly when printing on-demand or when the document contains a large number of loose leaf pages.
US Pat. 6480866
A small volume of material is volatilized, creating a large volume of gaseous products.
US Pat. 5469981
The paste pressure is released to avoid leaving a small volume of paste on the procoat.
US Pat. 5478700
The present invention provides a filter apparatus which concentrates the particles from a large volume of liquid into a small volume of liquid, thereby facilitating the inspection of the liquid for small particles.
US Pat. 5158690
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As shown in FIG. 4D, an initial thin layer 14a of liner material is deposited, for instance having a thickness of 300 Angstroms, after which about 40% to about 80% of the deposited initial thin layer 14a is sputtered off.
US Pat. 6380628
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FIG. 6B shows how maximum compaction can be achieved by successively increasing the fluence of ions of a single high energy ion beam.
US Pat. 4001049
It will be noted that maximum density can be achieved in the memory cell arrray area because of the use of essentially all of the semiconductor material as storage nodes.
US Pat. 3979734
So long as a pipeline can be sequenced according to the slowest operation for each cycle, maximum performance can be achieved without a fully asynchronous structure.
US Pat. 5553276
Maximum efficiency can be achieved by designing the rotational mask size to match the printed field size, thereby allowing for continuous scanning across the wafer without needing to stop or start the mask or wafer.
US Pat. 6411362
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Accordingly, it is a primary object of this invention to provide a method and apparatus having improved efficiency for selecting and transferring character data to printing means by simplifying character addressing in storage devices.
US Pat. 4146874
Another object of the present invention is to provide an optical device having increased efficiency and contrast ratio.
US Pat. 5863125
It is another object of the invention to provide presentation space-related location information within a scrollbar having greater efficiency for the case where the presentation space is significantly larger than a window size.
US Pat. 5510808
It is another object of the present invention to provide a thermoelectric cooler system having higher efficiency.
US Pat. 6161388
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Accordingly, there is a need to provide a technique for reducing cross talk in applications where adjacent interconnection lines run under large multi-pin circuit board components having relatively dense pin patterns.
US Pat. 4689441
An object of the present invention is to provide a technique for reducing power consumption in MPEG-2 video encoder devices.
US Pat. 6301671
U.S. Pat. No. 4,016,545 to Lipovski describes a technique for reducing the amount of data transmitted between the central processing unit (CPU) and the memory by removing a set of registers from the CPU and placing them in a plurality of memory chip controllers.
US Pat. 4286321
An additional feature of the present invention is a technique for reducing the effect of this residual TMR on the apparent shape of the product servopattern.
US Pat. 5844742
Another embodiment of the invention, illustrated in FIGS. 12 and 13, relies on this finding as a technique for reducing stress in a poly-Si film.
US Pat. 5913125
According to the present invention, a technique for reducing jitter in a phase locked loop circuit is provided.
US Pat. 5491439
This invention presents a technique for reducing the complexity and improve accuracy of calculation for delay and crosstalk for on-chip interconnections.
US Pat. 6342823
In one embodiment of the invention as will be described in further detail with reference to FIG. 6, a technique for reducing these costs is employed.
US Pat. 7171519
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This information is solicited only once, stored and tracked by the server computer and then used as needed.
US Pat. 6209031
Iconic representation 34 would maintain its color/intensity setting when the user interacted with the object only once within the month.
US Pat. 5448693
In this example, the compilation occurs only once per method.
US Pat. 6295641
There is thus a need also for an implementation of referential integrity which accesses newly modified data only once, eliminating the redundant double access associated with procedural implementations.
US Pat. 5133068
An integrated circuit is provided with at least one component transistor wherein a constant high voltage is applied only once to the drain electrode of the transistor for one predetermined period of time while concurrently a constant voltage lower than the high voltage is applied only once to the gate electrode of the transistor, thus causing a permanent channel hot-electron alteration of a gate oxide of the transistor.US Pat. 6038168
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Thereafter, the data required by buffer store 13A is merely allowed to be paged back into the buffer store 13A in the normal manner as it is needed.
US Pat. 4044337
FIG. 5 merely shows the screen which would have come up if the user chose to modify an existing network configuration.
US Pat. 6098097
FIG. 1 is provided merely for purposes of general background.
US Pat. 6181994
Merely tabulating an accurate accounting of total operating costs can be a daunting task in the PC environment.
US Pat. 6816882
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FIG. 7 illustrates the use of an array of MEMS devices to selectively establish thermal connections between the Peltier type thermoelectric devices and a cold sink.
US Pat. 5966941
FIG. 3 illustrates the use of a mask to form a pattern of exposing radiation.
US Pat. 4557995
FIG. 2C illustrates the use of a consumer's smart card in the four-party protocol, in accordance with the invention.
US Pat. 6327578
| 固定リンク
This is achieved if the emitter narrow dimensioned dielectric region or sidewall is determined from the "outside", rather than "inside", as shown in the above described process, the base contact windows can be reduced without change in device characteristics, and a 20 percent density improvement is achieved.
US Pat. 4400865
Of course, this improvement is achieved at the expense of some deterioration of image quality.US Pat. 5204756
Referring to FIGS. 6A and 6B, an example illustrating how a performance improvement is achieved by the present invention is shown.
US Pat. 5469560
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Additional performance improvements are achieved by using the subset-state concept at the expense of increased decoder complexity.
US Pat. 5031195
These improvements are achieved by reducing the mechanical path length from a solid base to the stage.
US Pat. 4925139
| 固定リンク
The disclosure provides improvements in effecting the routing function in a communication network operating under a distributed control protocol.
US Pat. 4644532
The present invention provides improvements to the MMPM/2 software system by changing the parsing method.
US Pat. 6397263
Nevertheless, the present invention provides improvements of a low temperature bonding material to attach the head to the ceramic slider along with fabricated chemical mechanical etch stops in the silicon that make such heads more compatible with existing MR head slider fabrication.
US Pat. 6587314
The present invention provides improvements over prior art call routing systems, as discussed more specifically below.
US Pat. 5926535
For example, in one aspect, the invention provides improvements on a SAN of the type having a plurality of hosts coupled via a network or other interconnect with one or more storage units.
US Pat. 6697924
| 固定リンク
Silicon is selectively grown over exposed silicon regions under conditions that provide controlled lateral growth over the thin dielectric without also permitting lateral growth over other insulator regions.
US Pat. 4873205
The present invention further provides a process for cleaning the workpiece with cleaning medium under conditions such that the workpiece is exposed to a single fluid phase of the cleaning medium.
US Pat. 6558475
Consequently, subsystem 3 may be programmed to switch dynamically back and forth between HS and PO modes under conditions described herein.
US Pat. 4451884
A multilayered interposer powering board is disclosed for the distribution of required voltage levels to integrated circuit chip modules under conditions of high current demand and heat induced expansions.
US Pat. 4688151
The second annealing step is thus carried out under conditions that are effective in converting silicide layer 18 into a silicide layer 20 having the lowest resistance silicide phase of the metal.
US Pat. 6323130
～させる条件の下で （-- to V）
This step is carried out under conditions to electrolytically form soluble iron and nickel chlorides while passivating the copper.
US Pat. 5108562
The method of claim 1 wherein the contact sheet is formed under conditions to provide compressibility of the contact sheet greater than about 6%.
US Pat. 6139666
| 固定リンク
FIG. 2 is a diagrammatic view of a portion of a display screen on which a menu for the interactive selection of one of a plurality of types of printer production operations before customization may be selected and graphically represented;
US Pat. 6232968
FIG. 1 is a generalized diagrammatic view of a network of server and client computers the interfaces of which may be customized according to the present invention;
US Pat. 6209031
| 固定リンク
訳例：図XXに示したもの（とは異なる）
以下は、IBMの明細書から。
Substitute mechanism 62 of FIG. 2, shown in FIG. 10, differs from those shown in FIG. 4 and FIG. 6 in that the binary bit patterns in the First Translation Array 88 and Second Translation Array 89 can be made permanent and require no modification as erroneous microinstructions are subsequently detected.
US Pat. 4422144
SQLDA can contain different numbers of variables from those shown in FIGS. 3 and 4, depending upon the requirements of the particular application.
US Pat. 5179660
It should be specifically noted that the values or mappings between the quantized error E and the quantization characteristic Q are significantly different from those shown in FIG. 3.
US Pat. 4369463
However, the absolute dose range and the dissolution rates within these ranges are quite different from those shown in FIG. 12.
US Pat. 5882967
However, the absolute dose range and the dissolution rates within these ranges are quite different from those shown in FIG. 6.
US Pat. 5861330
The time of occurrence of the light pulses from horizontal line 2, as shown in line H, is slightly different from those shown in line G of FIG. 5, for obvious reasons.
US Pat. 4117471
| 固定リンク
以下は、IBMの明細書から。
The operation requires that originals be placed adjacent to each other on the document glass in an order calculated to give the booklet order previously described.
US Pat. 4334765
Although section A is not depicted adjacent to section L, these two sections are adjacent in image 300.
US Pat. 5452413
The cells of different colors are in a laterally adjacent relationship to each other and the charged pigment particles are responsive to the electrodes.
US Pat. 6184856
A method for forming adjacent impurity regions of differing conductivities in a semiconductor substrate without using lithography.
US Pat. 4151010
A magnetoresistive read sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described.
US Pat. 5422571
| 固定リンク
以下は、IBMの明細書から。
A p-polarized beam of collimated light of known intensity is directed through an integrating sphere onto the film at substantially the Brewster's angle of the film.
US Pat. 4873430
After exiting the filter, the air is directed through a channel and up through the disk stack hub for recirculation by the rotating disks.
US Pat. 4780776
As a result, the reply packet is directed through the network to the base access station that serves the current physical location of the mobile host, and an optimal, fast routing of the packet is achieved without involving intermediate gateways (16, 18).
US Pat. 5442633
The sense current is directed through the spin valve sensor so that the sense current field from the pinned layer balances the ferromagnetic coupling on the free layer and the sense current field from the free layer adds to the ferromagnetic coupling on the pinned layer.
US Pat. 5666248
An electron beam is directed through the first test reticle to form a first pattern on a test surface, and the electron beam is then directed through the second test reticle to form a second pattern on a test surface.
US Pat. 5751004
| 固定リンク
以下は、IBMの明細書から。
＊of the same type
In relatively simple tree structures where all of the child objects are of the same type or subclass, the customary interface is sufficient.
US Pat. 6151024
The plurality of processors do not necessarily have to be of the same type, architecture, configuration, capacity or capability.
US Pat. 5602754
The allocated structures 45-48, which may be of the same type and exist concurrently, reside in separate SES storage locations and are located by a structure identifier (SID).
US Pat. 5822562
| 固定リンク
同じ参照番号
同じ構成部品
以下は、IBMの明細書から。
The details of the present invention, both as to its structure and operation, can best be understood in reference to the accompanying drawings, in which like reference numerals refer to like parts, and in which:
US Pat. 5973670
For a further understanding of the objects, features and advantages of the present invention, reference should be had to the following description of the preferred embodiment, taken in conjunction with the accompanying drawing, in which like parts are given like reference numerals and wherein:
US Pat. 6614421
Throughout the drawing figures, like reference numerals refer to like parts, unless otherwise indicated. Within each figure, the parts illustrated have been drawn in the proper scale relative to each other.
US Pat. 5543993
| 固定リンク
これは、高い解像度を有する比較的大きな画素サイズを実現でき、したがって、個々の画素の開口比を最大化する、という利点を有する。
This has the advantage of allowing a relatively large pixel size at high resolutions, thus maximising the aperture ratio of the individual pixels.
特許公表２００２－５１７７８１
WO9963395 （英文は日本人による翻訳：英文は参考程度に）
より
以下は、IBMの明細書から。
This provides the advantage of allowing one to do a test and burn-in on even high density chips.
US Pat. 6126456
The preferred embodiment also provides the advantage of allowing individual users of the database to search the data using either tree or array search techniques without requiring any detailed knowledge of the dual nature of the hybrid tree-array database.
US Pat. 6029170
The present invention has the advantage of allowing a first user of a data processing system to detect the activity of a second user of the data processing system or a second user of another data processing connected to the same network as the data processing system.
US Pat. 5349662
| 固定リンク
以下は、IBMの明細書から。
More specifically, a bending magnet, which directs the emitted electrons away from the primary beam so that they can be detected by conventional detectors physically distant from the primary beam, has been required.
US Pat. 5614833
This invention relates to thermal printers having a ribbon or other transfer medium upon which a thermal printhead presses during printing, the ribbon being directed away from the print area immediately past the printing location.
（the ribbon being directed away fromの構文に注目する）
US Pat. 4641148
| 固定リンク
以下は、IBMの明細書から。
This examination is preferably achieved through the use of a control block which identifies each of the logical devices and its corresponding operational state.
US Pat. 4403288
In a paging and swapping peripheral storage system 10, each of the devices 16-18 is provided with a plurality of logical device addresses, i.e. device D0 for example can be addressed by any one of four addresses.
US Pat. 4583166
Accordingly, each of the devices 12 includes command and address decode circuits 106, which either can be electrical circuits or can be programmed within device microprocessor 70.
US Pat. 4813011
In response to signals from each of the devices specifying their angular position at a particular time, the controller calculates the relative angular positions of the devices and issues a signal to each of the devices specifying the amount and direction of change in rotational velocity required to achieve synchronization.
US Pat. 5598303
| 固定リンク
IBMの明細書で、「use of xxx improves --」を含むものを以下のように整理した。
The use of slave processors considerably improves system speed by off-loading work from the CPU to the slave processor.
US Pat. 6212544
The use of slave processors considerably improves system speed by off-loading work from the CPU to the slave processor.
US Pat. 6256775
Furthermore, the use of the sacrificial carrier improves the ability to process thin films in the "multi-up" format.
US Pat. 6281452
It has been demonstrated that the use of SiGe gate stacks improves PFET device performance.
US Pat. 6838695
The use of synchronous data transfer improves system throughput by eliminating the overhead of start and stop bits which are required in asynchronous communication.
US Pat. 5557634
The use of a single stage of interpolation instead of three stages not only improves performance by reducing the number of operations required to determine the XYZ coordinates and normal vectors, but also improves the accuracy of the results by eliminating the floating point round-off and truncation errors which could be produced by the unnecessary floating point operations.
US Pat. 5488684
In these cases, avoiding the use of interpolation not only improves performance by reducing the number of operations required to determine the XYZ coordinates and normal vectors, but also improves the accuracy of the results by eliminating the floating point round-off and truncation errors which could be produced by the unnecessary floating point operations.
US Pat. 5488684
In RAID systems, the use of multiple disks improves reliability by enabling data redundancy.
US Pat. 6961815
While the use of SOI substrates improves the switching characteristics of CMOS circuitry, the use of SOI substrates is not entirely beneficial.
US Pat. 6475838
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The aforementioned limited visibility of the arbiter presents a critical problem for real-time processing such as the real-time processing of video and audio decoders.
US Pat. 6701397
A critical problem in the implementation of using avatars as proxies is the latency involved in transmitting information between the avatar and the user who is controlling the avatar.
US Pat. 5884029
One critical problem has to be overcome involving the formation of a complete silicon dioxide region 22 to fully dielectrically isolate the monocrystalline regions 30.
US Pat. 4104090
A less critical problem exists in the case of the logical sector containing leaf node C (506), in that this sector still is shown as already allocated in the media allocation map on the storage volume.
US Pat. 4750106
＊「深刻な」SYN
・acute 〈事態が〉緊急の注意を必要とする: The shortage of water became acute. 水不足が深刻になった.
・critical 〈事態や時期が〉岐路に立って重大なまたは深刻な: The patient has passed the critical stage. その患者は深刻な事態を脱した.
・serious 〈事態が〉重大な, 〈様子が〉真剣な, など一般的な意味で用いられる: She had a serious expression on her face. 彼女は深刻な顔をしていた.
（研究社 新英和大辞典より引用）
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ポリシリコン（LCD分野において）
polysilicon
7170468
IBM
With the advent of new low-temperature polysilicon LCD displays, LCD screens only need two edges of the display connected to driver circuitry, allowing two sides to be totally free of physical features that would prevent the abutment of the screens.
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フリッカ
flicker
5831283
IBM
This gate line pulse distortion results in non-uniformity of display brightness, reduction of gray scale display capability (i.e. lack of contrast in some areas and therefore lack of uniformity in contrast across the display) and often produces noticeable flicker.
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パッシブマトリクス
passive matrix
5777704
IBM
LCDs are fashioned either as passive or active matrix devices. A passive matrix display is addressed by a set of multiplexed transparent electrodes, perpendicular to one another, above and below the LC layer in a row and column formation. A passive pixel is addressed when there is a sufficient voltage gradient across it to cause the LC molecules to align themselves parallel to the electric field.
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ブラックマトリクス
black matrix
5907380
IBM
The black matrix material 23-1 is disposed opposite the TFTs 30, data line 31 and gate line 32 (not shown) in order to block the devices from ambient incident light and prevent light leakage through outside the pixel area.
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アレイ工程
array process
6713786
IBM
The present invention provides a thin film transistor (TFT) array process flow which employs two transparent conductor layers so that just one back side exposure in the array can be used.
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a-Si（アモルファスシリコン）
amorphous silicon
6753550
IBM
An amorphous silicon film (a-Si film) is formed so as to cover the source and drain electrodes.
＊Inventorsに日本人が含まれているが、語学面より技術面の理解度を重視して、この明細書を引用した。
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ITO
indium tin oxide
6448951
IBM
More specifically, a gate electrode in the TFT is connected to the gate line, a source electrode is connected to one of the four data lines, i.e., one of the four source lines, and a drain electrode is connected to a display electrode that is composed of indium tin oxide (ITO). When a gate pulse is applied to the gate lines by the gate driver 5 and a voltage signal representing data is applied to one of the data lines by the data driver 6, the TFT is turned on, the voltage signal is transmitted to a capacitor (not shown), and a charge accumulated in the capacitor is applied to the display electrode, so that the state of the liquid crystal molecules is changed from a state wherein light from the backlight is passed.
＊Inventorsに日本人が含まれているが、語学面より技術面の理解度を重視して、この明細書を引用した。
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ソースドライバ、ゲートドライバ
source driver, gate driver
6184855
IBM
A source driver 3 is connected to the source of the transistor 105 provided for each cell of the LCD panel 1 and a gate driver 5 is similarly connected to the gate of the transistor 105.
5663765
IBM
The liquid crystal display panel 20 is connected with a source driver 16 for driving a source line and a gate driver 18 for driving a gate line of the liquid crystal display panel 20.
＊Inventorsに日本人が含まれているが、語学面より技術面の理解度を重視して、これらの明細書を引用した。
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LCDドライバ回路
LCD driver circuit
5600462
IBM
An LCD device includes an LCD panel, polarizers, a backlight device, and an LCD driver circuit.
＊Inventorsに日本人が含まれているが、語学面より技術面の理解度を重視して、この明細書を引用した。
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カラーフィルタ
color filter
5066512
IBM
More particularly, the invention relates to improved methods for selectively depositing different colored applications on individual color filter regions to produce a multi-color filter layer, such as for a liquid crystal display device.
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偏光フィルタ（偏光板）
polarizing filter, polarizer
5058997
IBM
The polarizing filter is typically attached to one of the glass plates.
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パッド
pad
5546013
IBM
Each data line terminates in a data line electrode or data line pad 22.
＊Inventorsに日本人が含まれているが、語学面より技術面の理解度を重視して、この明細書を引用した。
つまり、パッドは電極であることを理解することを優先した。
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配向膜
alignment film
6346975
IBM
The present invention relates to a liquid crystal display device, and more specifically to a liquid crystal display having an alignment film that reduces image sticking.
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偏光板
polarizer
6816225
IBM
Pixel electrodes are used to control the light transmission through the liquid crystal in conjunction with polarizers 60 and 62.
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TFTパネル
thin-film transistor panel
6317114
IBM
The display device 10 is typically formed by a liquid crystal display (LCD) or a thin-film transistor (TFT) panel, and has physical borders 1.
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TFT-LCD
thin film transistor-liquid crystal display
6724449
IBM
It is well known that the vertical-crystal-aligned (VA) liquid crystal display (LCD) has a good black state, and thus it has a high contrast ratio. VA-LCD has been used in both the direct view thin film transistor-liquid crystal display (TFT-LCD) panel and the liquid crystal projection light valve.
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投射型ディスプレイ
projection display
5786934
IBM
The present invention is directed to optical systems for projection displays and more particularly to a high resolution improved optical system employing reflection light valves.
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細長い棒
elongated bar
4317611
IBM
The semiconductor plate is etched to form an elongated bar of the material having a wider central portion which forms a reflecting surface armature of suitable area suspended internally of the rectangular frame formed by the remainder of the semiconductor plate.
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resonance frequency
6417982
IBM
A method and apparatus for identifying and filtering a resonance frequency of a support structure supporting a read/write head in proximity with a data storage medium involves obtaining a particular sample of a position error signal (PES) frequency transform, preferably using Goertzel's algorithm.
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PIP
Picture in Picture
6317164
IBM
Such techniques sometimes referred to as Picture in Picture (PIP) are well known in the analog television art.
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QPSK
quadrature phase shift keying
6075408
IBM
In the quadrature phase shift keying (QPSK), the carrier phase is modulated to have four possible values, corresponding to the transmitted information symbols 00, 01, 10, 11.
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高速フーリエ変換
Fast Fourier Transform
4744041
IBM
When calculating the motor's electrical parameters, the P.C. performs a fast Fourier transform on the steady state current to determine its power-spectral-density which shows the frequency composition of the steady state current waveform by giving the power in the waveform at each frequency.
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フラクタル幾何学
fractal geometry
6597906
IBM
A well-known fractal geometry is the so-called Mandelbrot set, named for IBM mathematician, Benoit B. Mandelbrot, who is credited with coining the term "fractal."
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GPS
global positioning system
6148383
IBM
Primary and secondary controllers access a universal timer, such as a global positioning system (GPS).
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凸型ミラー
convex mirror
5774247
IBM
An optical signal data transceiver comprises a convex mirror to direct received optical signals onto at least one detector responsive to corresponding optical wavelengths.
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凹型ミラー
concave mirror
4171871
IBM
A spherical concave mirror is used to provide unit magnification at high numerical aperture with respect to object and image planes which are both located at or in the proximity of the center of curvature of the mirror, or the optical equivalent thereof.
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サファイヤ基板
sapphire substrate
4214946
IBM
The Weitzel patent discloses a process for forming a blind hole having an isosceles trapezoidal cross-section in a sapphire substrate using a sulfur hexafluoride gas etchant and an etch mask of silicon nitride on top of silicon dioxide.
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フェルミレベルピニング
fermi level pinning
5021365
IBM
It is recognized in the art that the insensitivity of the barrier at the metal/compound semiconductor interface to metal work functions is due to pinning at the interface of the Fermi level at a fixed energy within the band gap of the compound semiconductor material. This situation is termed "Fermi level pinning".
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ESD
electrostatic discharge
5811857
IBM
An SOI circuit comprising at least one body-coupled gated diode formed from the SOI FET provides electrostatic discharge (ESD) protection and ideal diode characteristics.
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電流コラプス
current collapse
5327055
IBM
Since bridge rectifer 547 is a very low impedance device compared with the MOV of the brake solenoid 530, the time constant of the current collapse in the brake solenoid 530 is stretched out in time by a factor of ten or more.
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帯域幅
bandwidth
5634034
IBM
Each of the Global Memory cards 26 provides a data bandwidth of 640 MB/second in a manner that reduces a memory access latency seen by each processor 22a in the system 10.
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アモルファス材料
amorphous material
3716844
IBM
It has been discovered here that highly absorbing thin films of amorphous materials such as Si, Ge, and SiC, when subjected to localized heating from a moderate intense laser or electron beam exhibit some degree of transparency even in the amorphous state and are substantially transparent in their crystalline state.
※amorphous
adj.
1 不定形の.
2 【結晶】 非晶質の, 非結晶質の, アモルファスな： 結晶した物質を含まない組織を指す. 例： amorphous silica 非晶質無水ケイ酸, amorphous graphite 土状黒鉛. cf. →crystalline.
（研究社 理化学英和辞典より引用）
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キャップ膜
capping film
6258707
IBM
The process as in claim 1, in which said step (b) includes forming a capping film on said upper surface of said dielectric film, said capping film having a capping surface and wherein said polished surface is substantially continuous with said capping surface.
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SM
stress migration ストレス･マイグレーション
6426544
IBM
The present invention generally relates to Integrated circuit structures and fabrication and, more particularly, to formation of wiring having improved resistance to electromigration and stress migration failure and high precision capacitors.
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EM
electro-migration, electromigration エレクトロマイグレーション
4234367
IBM
However, it was found that silver has a tendency to cause electro-migration problems and is suspected of diffusing into the glass-ceramic.
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CoWP
cobalt-tungsten-phosphorus
7005371
IBM
Other materials that may be used for encapsulating the interconnects include cobalt-tungsten-phosphorus (CoWP) and Ni--Au alloys, which may be deposited by electroplating and electroless plating, among other methods.
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エバネセント波
evanescent wave
5220403
IBM
For example, as illustrated in FIG. 2a, a ray 210 propagating through the lens at an angle of 66.degree. from the normal to a silicon air interface, becomes an evanescent wave 212 which dies off as e.sup.-kz where k is given by equation ABCDE.
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プラズモン
plasmon
4249796
IBM
That light which is not reflected is converted into surface electromagnetic waves, either plasmons or polaritons, at the surface of the film.
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フォトマスクブランクス
photomask blanks
6543617
IBM
Fast and high resoltuion resists that are exposable by electron beams or laser beams at all wavelengths are also vital for next generation production of photomask blanks (see "Positive Chemically Amplified Resist for Next Generation Photomask Fabrication" by T. Segaw et al., SPIE Proceed., 3236, 82-93 (1999)).
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混載DRAM
eDRAM
embedded dynamic random access memory
7073139
IBM
A method for determining contact location for embedded dynamic random access memory (eDRAM) formed in a silicon-on-insulator (SOI) substrate includes reviewing contact design data for an eDRAM device and discarding contact locations corresponding to contact shapes within a support area of the eDRAM device.
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混載DRAM
mixed DRAM
6251751
IBM
This invention relates to forming bulk or strained Si/SiGe layered regions adjacent to or on an insulator and more particularly to local selective oxidation of SiGe for forming an insulator region underneath semiconductor regions for device applications such as complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET's), modulation-doped field-effect transistors (MODFET's), dynamic random access memories (DRAM's), mixed DRAM and CMOS, static random access memories (SRAM's), BiCMOS, and rf.
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high-kゲート絶縁膜
high-k gate insulator
6271094
IBM
herefore, the development of a Complementary Metal Oxide Semiconductor (CMOS) technology which utilizes a high-k gate insulator is a must for the continuing of CMOS scaling into the sub-0.1 .mu.m regime.
「high-kゲート絶縁膜」について：
ゲート絶縁膜として「厚さがあり、かつ大量の電流を流せる高誘電率な素材」を「high-kゲート絶縁膜」と呼ぶのが一般的なようである。
high-k gate insulatorは、語学的には「high-kゲート絶縁体」なのであるが、実際には、「絶縁膜」の「膜」という用語のほうがはるかに多く使われている。
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ディープSiエッチング
deep Si etching
7139172
IBM
In one exemplary embodiment of the invention in which the substrate (41) is formed of silicon (Si), the fluid vias can be formed using a deep Si etching method to etch the fluid vias partially through the substrate (41).
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LWR
line width roughness（ライン幅ラフネス）
7105398
IBM
According to the invention, there is provided a methodology that uses an in-line CD SEM to measure and flag issues in the dual spacer process by making a line width roughness measurement (LWR) in the region of interest (ROI).
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PVDF
polyvinylidene fluoride（ポリフッ化ビニリデン）
6228231
IBM
Frame 34 preferably includes polyvinylidene fluoride (PVDF), polypropylene, PVC, or other suitable non-conductive material, further being resistant to corrosion from the electrolyte bath.
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PVC
polyvinyl chloride（ポリ塩化ビニル）
6126798
IBM
Anode cup 202 is typically an electrically insulating material such as polyvinyl chloride (PVC), polypropylene or polyvinylidene flouride (PVDF).
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PMMA
poly(methyl methacrylate) （ポリメチルメタアクリレート）
5547812
IBM
Microbridge formation in chemically amplified negative tone photoresists based on poly(hydroxystyrene) (PHS) is avoided when the PHS is blended together with a co-polymer of PHS and an acrylic polymer such as poly(methyl methacrylate) (PMMA).
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PDMS
polydimethylsiloxane（ポリジメチルシロキサン）
6537499
IBM
The biosensor comprises at least one pillar made of elastomeric material like polydimethylsiloxane (PDMS) having a diameter from about 0,1 .mu.m to 1 mm and an aspect ratio of about 2-10.
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MOCVD
metal organic chemical vapor deposition（有機金属気相成長）
5543988
IBM
Layer 30 and semiconductor bar 14 may be deposited by an epitaxial technique including molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD) and liquid phase epitaxy (LPE).
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SSOI
strained silicon-on-insulator
6774015
IBM
Strained silicon-on-insulator (SSOI) and method to form the same
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TSV
through-silicon via（Si貫通ビア）
7111149
Intel
Future memory devices may utilize new technologies in packaging stacked devices, such as through-silicon vias or optical technology.